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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The 71V65603S133BG is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It features a storage capacity of 9 Mbit organized as 256K x 36 bits. The device operates with a maximum clock frequency of 133 MHz and provides an access time of 4.2 ns. It utilizes a parallel interface and requires a supply voltage ranging from 3.135 V to 3.465 V. The component is housed in a 119-PBGA package measuring 14x22 mm and supports surface mount installation. It functions within a temperature range of 0°C to +70°C.
Feature Summary
- Supports synchronous Single Data Rate (SDR) operation for high-speed data transfer
- Designed with Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read-write transitions
- Provides pipelined architecture for efficient processing throughput
Applications
- High-performance networking equipment requiring fast memory access
- Industrial control systems utilizing synchronous SRAM interfaces
- Telecommunications infrastructure components
Procurement Notes
Verify the current manufacturing status before procurement, as this specific part number may be obsolete or subject to production discontinuation notices. Confirm that the 119-PBGA package dimensions and pinout are compatible with existing PCB footprints. Ensure that the operating temperature range meets the environmental requirements of the target application. Check for official replacement recommendations from the manufacturer if availability is limited.
Selection Notes
Select this component when a 9 Mbit synchronous SRAM with a 36-bit word width is required. The 133 MHz clock speed and 4.2 ns access time suit applications demanding low latency. Consider the 119-PBGA package size for board space constraints. Verify compatibility with 3.3V logic levels and ensure the system design accommodates the specified power supply voltage tolerances.
Part Context
This device belongs to the 71V65603 series of synchronous SRAMs from Renesas Electronics. The series offers various speed grades and package options to accommodate different performance and form factor needs. The 71V65603S133BG specifically targets applications needing reliable, high-speed volatile memory storage with a wide data bus.
Replacement Considerations
Officially documented similar replacements include 71V65703S75BG and 71V65703S80BG. These alternatives share the same basic product family but differ in speed grade and potentially other specifications.
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