71V65603S133BGG

71V65603S133BGG

$18.50
  • Description:IC SRAM 9MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:c3e16a5b9c4e Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:4.2 ns

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71V65603S133BGG

Overview

The 71V65603S133BGG is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 megabits organized as 256K words by 36 bits. The device operates with a maximum clock frequency of 133 MHz and provides an access time of 4.2 nanoseconds. It utilizes a parallel interface and requires a supply voltage between 3.135V and 3.465V. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm, designed for surface-mount installation.

Feature Summary

  • Supports high-speed data transfer via a 133 MHz synchronous clock interface
  • Provides wide 36-bit data bus width for efficient parallel processing
  • Delivers rapid 4.2 ns access latency for low-latency memory operations

Applications

  • High-performance computing systems requiring fast cache memory
  • Network infrastructure equipment utilizing parallel data buses
  • Industrial control systems needing reliable volatile storage

Procurement Notes

Verify the specific package variant and speed grade against current project requirements before procurement. Confirm that the 119-pin PBGA footprint matches the target PCB layout. Check for end-of-life status or obsolescence notices from the manufacturer to ensure long-term supply availability. Ensure compatibility with the 3.3V power domain and signal integrity specifications of the host system.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required. The 133 MHz speed grade suits applications demanding low latency. Consider the 119-pin BGA package constraints during mechanical design. Evaluate thermal dissipation capabilities within the 0°C to 70°C operating range. Compare pinout compatibility if replacing legacy IDT devices.

Part Context

This part belongs to the 71V65603 series of synchronous ZBT SRAMs. It serves as a high-density memory solution for embedded applications. The device replaces older generations of asynchronous SRAMs in high-speed designs. It maintains electrical compatibility with standard parallel memory controllers while offering improved throughput through synchronous operation.

Replacement Considerations

Public confirmed substitute part numbers include 71V65703S75BG and 71V65703S80BG.

71V65603S133BGG71V65603S133BGG
$18.50
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