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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The 71V65603S133BGG is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 megabits organized as 256K words by 36 bits. The device operates with a maximum clock frequency of 133 MHz and provides an access time of 4.2 nanoseconds. It utilizes a parallel interface and requires a supply voltage between 3.135V and 3.465V. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm, designed for surface-mount installation.
Feature Summary
- Supports high-speed data transfer via a 133 MHz synchronous clock interface
- Provides wide 36-bit data bus width for efficient parallel processing
- Delivers rapid 4.2 ns access latency for low-latency memory operations
Applications
- High-performance computing systems requiring fast cache memory
- Network infrastructure equipment utilizing parallel data buses
- Industrial control systems needing reliable volatile storage
Procurement Notes
Verify the specific package variant and speed grade against current project requirements before procurement. Confirm that the 119-pin PBGA footprint matches the target PCB layout. Check for end-of-life status or obsolescence notices from the manufacturer to ensure long-term supply availability. Ensure compatibility with the 3.3V power domain and signal integrity specifications of the host system.
Selection Notes
Select this component when a 36-bit wide synchronous SRAM interface is required. The 133 MHz speed grade suits applications demanding low latency. Consider the 119-pin BGA package constraints during mechanical design. Evaluate thermal dissipation capabilities within the 0°C to 70°C operating range. Compare pinout compatibility if replacing legacy IDT devices.
Part Context
This part belongs to the 71V65603 series of synchronous ZBT SRAMs. It serves as a high-density memory solution for embedded applications. The device replaces older generations of asynchronous SRAMs in high-speed designs. It maintains electrical compatibility with standard parallel memory controllers while offering improved throughput through synchronous operation.
Replacement Considerations
Public confirmed substitute part numbers include 71V65703S75BG and 71V65703S80BG.
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