71V65603S133BGGI8

71V65603S133BGGI8

$18.83
  • Description:IC SRAM 9MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:87a4bec5b153 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:4.2 ns

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71V65603S133BGGI8

Overview

The Renesas Electronics Corporation 71V65603S133BGGI8 is a 9 Megabit (9,437,184-bit) synchronous static random-access memory (SRAM) IC. It features a memory organization of 256K x 36 bits and operates with a maximum clock frequency of 133 MHz. The device supports a parallel interface and utilizes a 119-PBGA (14x22) surface-mount package. It functions within a supply voltage range of 3.135 V to 3.465 V and maintains an operating temperature range from -40°C to +85°C.

Feature Summary

  • Supports high-performance system speeds through synchronous ZBT technology
  • Designed to eliminate dead bus cycles for efficient data transfer
  • Provides 256K x 36 memory configuration options

Applications

  • High-speed digital signal processing systems
  • Network infrastructure equipment requiring low-latency buffering
  • Industrial control systems demanding reliable synchronous memory

Procurement Notes

Verify component authenticity and datasheet alignment before integration. Confirm RoHS compliance status as historical records indicate non-compliance for some variants in this series. Check for End-of-Life notices or production change notifications that may affect long-term availability. Ensure moisture sensitivity level handling protocols are followed during assembly.

Selection Notes

Select this component when a 256K x 36 synchronous SRAM architecture is required for 3.3V logic systems. The 133 MHz speed grade suits applications needing fast pipeline access. Compare against the 71V65603S100BGI for lower speed requirements or different pinout compatibility. Ensure the 119-PBGA footprint matches the PCB design constraints.

Part Context

This part belongs to the IDT71V65603/5803 family of 3.3V high-speed synchronous SRAMs manufactured by Renesas Electronics. These devices are engineered to provide high-density memory solutions with pipelined architectures. The family typically includes variations in access time and package type to suit diverse embedded memory needs.

Replacement Considerations

Publicly confirmed substitute part numbers include IDT71V65603S133BGI8.

71V65603S133BGGI871V65603S133BGGI8
$18.83
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