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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V65603S133BQ is a synchronous single data rate (SDR) zero bus turnaround (ZBT) static random-access memory (SRAM). It features a storage capacity of 9 Mbit organized as 256K x 36. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates on a single 3.3 V power supply, ranging from 3.135 V to 3.465 V. The component utilizes a parallel interface and is housed in a 165-CABGA package measuring 13x15 mm.
Feature Summary
- Supports high-speed synchronous operation at up to 133 MHz with fast 4.2 ns access times
- Features a wide 36-bit data organization for efficient parallel data transfer
- Utilizes zero bus turnaround technology to maximize throughput efficiency
Applications
- High-performance embedded systems requiring fast local memory
- Network infrastructure equipment needing rapid data buffering
- Industrial control systems demanding reliable volatile storage
Procurement Notes
Verify the specific suffix BQ against official Renesas documentation to confirm the exact package type and temperature range. Confirm RoHS compliance status and moisture sensitivity level prior to ordering. Check for any product change notices or end-of-life announcements that may affect long-term availability and supply chain stability.
Selection Notes
Select this component when a 36-bit wide data path is required for system architecture compatibility. Ensure the design accommodates the 165-ball ball grid array footprint and thermal requirements. Verify that the 3.3 V logic levels match the host processor interface specifications for proper signal integrity.
Part Context
This part belongs to the 71V65603 series of synchronous ZBT SRAMs. The series offers various speed grades and packaging options to suit different performance needs. The 133 MHz variant provides a balance between speed and power consumption for general-purpose high-speed memory applications.
Replacement Considerations
Officially documented similar substitutes include the 71V65603S150BQGI. Verify pinout compatibility and electrical parameter alignment before substitution.
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