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71V65603S133BQGI8
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Product Detailed Parameters
- Description：IC SRAM 9MBIT PARALLEL 165CABGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Synchronous, SDR (ZBT)
- Memory Size：9Mbit
- Memory Organization：256K x 36
- Memory Interface：Parallel
- Clock Frequency：133 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：3.135V ~ 3.465V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：165-TBGA
- Supplier Device Package：165-CABGA (13x15)
- Access Time：4.2 ns
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Overview
The 71V65603S133BQGI8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It features a storage capacity of 9 Mbit, organized as 256K x 36 bits. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates on a parallel interface with a supply voltage range of 3.135 V to 3.465 V and a maximum power current of 300 mA. The component is housed in a 165-CABGA package measuring 13x15 mm.
Feature Summary
- Supports Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read-write transitions.
- Integrates address, data-in, and control signal registers for efficient synchronous operation.
- Provides flow-through output without additional output data registers.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in network routers and switches
- Data storage in industrial automation control systems
Procurement Notes
Verify the specific suffix BQGI8 against official Renesas documentation to confirm the exact package type and moisture sensitivity level. Confirm RoHS compliance status as it varies by manufacturing date. Check for End-of-Life notices or Product Change Notifications that may affect long-term availability. Ensure the source document explicitly lists this part number to avoid confusion with similar variants like the PFG or BGI packages.
Selection Notes
Select this component when a 9 Mbit synchronous SRAM with a 36-bit word width is required. The 133 MHz speed and 4.2 ns access time suit high-performance applications. Verify that the 165-CABGA package fits the board layout constraints. Ensure the system design accommodates the specified 3.3V core voltage and 300 mA maximum current draw.
Part Context
This part belongs to the 71V65603 family of ZBT synchronous SRAMs from Renesas. These devices are designed to replace asynchronous memories in high-speed digital systems. The family offers various packaging options including TQFP, CBGA, and PBGA to accommodate different board space and thermal requirements.
Replacement Considerations
Officially documented substitutes include 71V65603S150BQGI and IS61NLP25636A-200B3LI. Verify pin compatibility and electrical specifications before substitution.
