71V65603S133BQI

Overview

The Renesas Electronics Corporation 71V65603S133BQI is a 9 Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM). It features a memory organization of 256 k x 36 bits and supports a maximum clock frequency of 133 MHz. The device operates within a voltage range of 3.135 V to 3.465 V and utilizes a parallel interface. It is housed in a 165-CABGA package with dimensions of 13x15 mm.

Feature Summary

• Supports high-speed synchronous data transfer at up to 133 MHz
• Provides wide 36-bit data bus width for efficient data handling
• Operates on standard 3.3V power supply specifications

Applications

• High-performance embedded systems requiring fast memory access
• Network infrastructure equipment
• Industrial control systems

Procurement Notes

Verify the specific package marking and date code upon receipt to ensure authenticity. Confirm that the component matches the 165-CABGA form factor required by the design. Check for any manufacturer notices regarding end-of-life status or recommended replacements before finalizing procurement plans.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required. Ensure the system design accommodates the 165-pin BGA footprint. Verify that the operating temperature range meets the environmental requirements of the target application.

Part Context

This part belongs to the 71V65603 series of synchronous SRAMs from Renesas. It is designed for applications needing high bandwidth and low latency. The 36-bit organization distinguishes it from standard 8-bit or 16-bit memory solutions, making it suitable for specialized data processing tasks.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.