71V65603S133PFG

71V65603S133PFG

  • Description:IC SRAM 9MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:16313b174eb3 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (14x14)
  • Access Time:4.2 ns

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71V65603S133PFG

Overview

The Renesas Electronics Corporation 71V65603S133PFG is a static random-access memory device with a storage capacity of 9 Mbit, organized as 256 k x 36. It operates at a maximum clock frequency of 133 MHz with an access time of 7.5 ns. The component utilizes a parallel interface and functions within a supply voltage range of 3.135 V to 3.465 V. It is housed in a TQFP-100 surface-mount package and supports single data rate synchronous operation.

Feature Summary

  • Supports high-speed parallel data transfer via a synchronous interface architecture
  • Provides reliable volatile data retention for system memory applications
  • Designed for surface-mount installation on printed circuit boards

Applications

  • High-performance computing systems requiring fast memory access
  • Network infrastructure equipment utilizing wide data buses
  • Industrial control systems needing robust synchronous memory solutions

Procurement Notes

Verify the specific suffix PFG against official datasheets to confirm the exact package dimensions and pinout configuration. Ensure compatibility with the target operating temperature range of 0°C to +70°C. Confirm moisture sensitivity level requirements before assembly. Check for any recent product change notices regarding manufacturing sites or material composition updates.

Selection Notes

Select this component when a 36-bit wide data path is required for system integration. Consider the 133 MHz speed grade for timing constraints in high-frequency designs. Evaluate the TQFP-100 footprint availability against existing board layouts. Compare power consumption specifications against alternative memory technologies for efficiency requirements.

Part Context

This part belongs to the 71V65603 series of synchronous SRAM devices manufactured by Renesas Electronics. The series offers various speed grades and packaging options to accommodate different design needs. These components are engineered for applications demanding high bandwidth and low latency memory performance.

Replacement Considerations

Publicly confirmed substitute part numbers include IDT71V65603S133PFG.

71V65603S133PFG71V65603S133PFG

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