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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR),Cut Tape (CT)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:4.2 ns
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Overview
The 71V65603S133PFG8 is a synchronous ZBT SRAM with 9 Mbit capacity organized as 256K x 36. It operates at a maximum clock frequency of 133 MHz with a 4.2 ns access time. The device uses a 100-TQFP (14x14) package and supports parallel interface. Supply voltage ranges from 3.135 V to 3.465 V, with a maximum supply current of 300 mA. Operating temperature spans -40°C to +85°C. Moisture sensitivity level is MSL 3.
Feature Summary
- Supports synchronous single data rate burst operations with pipelined outputs
- Features low power consumption for high-density memory applications
- Includes on-chip burst counter for simplified interface control
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory in network processing systems
- Frame buffer storage in video processing units
Procurement Notes
Verify RoHS compliance status as the PFG8 suffix may indicate non-compliant variants compared to standard PFG versions. Confirm lead times due to potential end-of-life transitions within the 71V65603 family. Check moisture sensitivity handling requirements before assembly. Validate pin compatibility with existing PCB footprints for the 100-TQFP package.
Selection Notes
Select this component when 256K x 36 organization is required for wide data paths. Choose over narrower widths to reduce chip count in parallel bus architectures. Ensure system timing allows for 4.2 ns access at 133 MHz. Consider thermal management for 300 mA peak current draw in enclosed designs.
Part Context
Part of the Renesas 71V65603 series of synchronous ZBT SRAMs. Shares architectural features with IDT71V65603 variants. Designed for high-performance embedded memory needs. Replaced older asynchronous SRAMs in speed-critical applications. Compatible with standard synchronous logic families.
Replacement Considerations
- 71V65603S133PFGI
FAQ
What is the difference between 71V65603S133PFG and 71V65603S133PFG8?
The PFG8 variant typically indicates specific packaging or environmental compliance differences, such as non-RoHS status, compared to the standard PFG version.
Is the 71V65603S133PFG8 still in production?
Availability varies by region; some distributors list it as obsolete or limited stock due to family transitions.
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