71V65603S133PFGI

71V65603S133PFGI

$19.64
  • Description:IC SRAM 9MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:00ebe43304bb Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (14x14)
  • Access Time:4.2 ns

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71V65603S133PFGI

Overview

The Renesas Electronics Corporation 71V65603S133PFGI is a synchronous single data rate zero bus turnaround static random access memory integrated circuit. It provides a total storage capacity of 9 megabits organized as 256 kilobytes by 18 bits. The device operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 nanoseconds. It utilizes a parallel interface and requires a supply voltage between 3.135 volts and 3.465 volts. The component is housed in a 100-lead thin quad flat package measuring 14 by 14 millimeters and supports surface mount installation.

Feature Summary

  • Supports high-speed synchronous operation with zero bus turnaround capability for efficient data transfer
  • Provides reliable volatile memory storage with fast access times suitable for real-time processing applications
  • Operates within standard industrial temperature ranges for robust environmental performance

Applications

  • High-performance embedded systems requiring fast data buffering
  • Industrial equipment control units needing reliable temporary storage
  • Network infrastructure components utilizing parallel memory interfaces

Procurement Notes

Verify the specific suffix PFGI to confirm the 100-TQFP package and 133 MHz speed grade, as variations exist within the family. Confirm RoHS3 compliance status for current production runs. Check official notices for end-of-life announcements or assembly site changes that may affect long-term availability. Ensure compatibility with existing board layouts regarding pin assignments and thermal requirements before ordering.

Selection Notes

Select this part when a 9-megabit capacity with 18-bit word width is required for parallel synchronous memory applications. The 133 MHz speed grade offers faster performance than lower-frequency variants while maintaining the same physical footprint. Consider the 100-TQFP package for surface-mount designs where leaded alternatives are unsuitable. Verify power supply constraints align with the specified 3.3-volt nominal range for stable operation.

Part Context

This component belongs to the 71V65603 series of synchronous SRAM devices manufactured by Renesas Electronics. The series includes various speed grades and package options to support different system timing and form factor requirements. These memories are designed for applications demanding high throughput and low latency in data-intensive environments.

Replacement Considerations

The 71V65603S133BQGI serves as a package alternative using a ball grid array format. Other speed variants within the same series may offer different timing characteristics but require verification of electrical compatibility.

71V65603S133PFGI71V65603S133PFGI
$19.64
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