71V65603S133PFGI8

Overview

The Renesas Electronics Corporation 71V65603S133PFGI8 is a 9 Mbit synchronous static random-access memory (SRAM) organized as 256K x 36. It operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. The device utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V, with a maximum power current of 300 mA. It is housed in a 100-TQFP surface-mount package and supports Single Data Rate (SDR) ZBT technology.

Feature Summary

• Supports Zero Bus Turnaround (ZBT) architecture to eliminate dead bus cycles during read-to-write or write-to-read transitions.
• Operates on a single 3.3 V power supply with LVTTL-compatible inputs and outputs.
• Features asynchronous chip select and byte write controls for flexible data masking.

Applications

• High-performance processor secondary cache systems
• Network infrastructure equipment requiring fast data buffering
• Industrial control systems demanding reliable volatile memory storage

Procurement Notes

Verify the specific suffix 'I8' against official Renesas documentation to confirm it denotes the industrial temperature range (-40°C to +85°C) and tape-and-reel packaging format. Cross-reference the part number with the manufacturer's latest datasheet to ensure compatibility with system voltage levels and signal integrity requirements before finalizing procurement orders.

Selection Notes

Select this component when a high-density 9 Mbit SRAM with 36-bit width is required for wide-data-path applications. The 133 MHz speed grade suits designs needing low-latency access. Ensure the design accommodates the 100-pin TQFP footprint and that the PCB layout supports the necessary decoupling for the specified 300 mA peak current consumption.

Part Context

This part belongs to the 71V65603 series of synchronous ZBT SRAMs from Renesas Electronics. The series is designed to replace traditional asynchronous SRAMs in high-speed digital systems by providing pipeline-friendly operation without sacrificing bandwidth. It serves as a critical memory solution for embedded applications where data retention speed is paramount.

Replacement Considerations

Consult official Renesas substitution guides for verified equivalents. Generic cross-references may not match the specific ZBT timing parameters or pinout configurations required for seamless integration into existing circuit designs.