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Product Detailed Parameters
- Description:IC SRAM 9MBIT PAR 150MHZ 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.8 ns
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Overview
The Renesas Electronics Corporation 71V65603S150BGG is a 9 Megabit (9,437,184-bit) synchronous static random-access memory (SRAM) device. It features a memory organization of 256K x 36 bits and supports a maximum clock frequency of 150 MHz with a 3.8 ns clock-to-data access time. The component operates on a single 3.3V power supply, with voltage specifications ranging from 3.135V to 3.465V. It utilizes a parallel interface and is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm. The device is designed for high-performance system applications requiring fast data throughput.
Feature Summary
- Supports high-speed system performance through 150 MHz operation
- Eliminates dead bus cycles via synchronous architecture
- Provides flexible memory configurations including 256K x 36
Applications
- High-performance computing systems
- Network infrastructure equipment
- Industrial control systems
Procurement Notes
Verify the specific suffix BGG corresponds to the 119-PBGA (14x22) package configuration. Confirm RoHS compliance status as historical records indicate potential non-compliance for earlier variants. Check for active production status or obsolescence notices prior to ordering. Ensure the supplier provides valid traceability documentation for this synchronous SRAM component.
Selection Notes
Select this model when a 9Mb capacity with 36-bit word width is required. Choose based on the 150 MHz speed grade and 3.8 ns access time requirements. Consider the 119-PBGA footprint for board layout compatibility. Verify that the 3.3V operating voltage aligns with the target system's power rails.
Part Context
This component belongs to the IDT71V65603/5803 family of 3.3V Synchronous ZBT SRAMs. These devices are engineered to replace asynchronous memories in high-speed digital designs. The family offers various speed grades and package options to suit different performance and form factor constraints in embedded memory applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material.
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