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Product Detailed Parameters
- Description:IC SRAM 9MBIT PAR 150MHZ 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.8 ns
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Overview
The Renesas Electronics 71V65603S150BGGI8 is a 9 Mbit Synchronous Static Random Access Memory (SRAM) organized as 256K x 36 bits. It operates with a maximum clock frequency of 150 MHz and features a typical access time of 3.8 ns. The device utilizes a parallel interface and supports Single Data Rate (SDR) transfer modes. It functions within a supply voltage range of 3.135 V to 3.465 V, with a maximum power consumption of 270 mA. The component is housed in a 119-pin PBGA package measuring 14x22 mm and is rated for an operating temperature range of -40°C to +85°C.
Feature Summary
- Supports high-speed synchronous data transfers at up to 150 MHz
- Provides wide 36-bit data bus width for efficient word-level processing
- Operates on standard 3.3V logic levels for system compatibility
- Utilizes Zero Bus Turnaround (ZBT) architecture for reduced latency
Applications
- High-performance networking equipment requiring fast packet buffering
- Industrial control systems needing rapid data acquisition
- Medical imaging devices utilizing real-time signal processing
- Automotive electronics demanding reliable memory storage
Procurement Notes
Verify the specific suffix BGGI8 against official Renesas documentation to confirm pinout and electrical characteristics. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Check current production lifecycle status as components may be subject to discontinuation notices. Ensure proper handling procedures are followed due to surface mount requirements.
Selection Notes
Select this component when a 36-bit data path is required for wide-word applications. Choose this part over narrower interfaces to minimize pin count while maintaining high throughput. Consider the 150 MHz speed grade for timing-critical designs. Evaluate the PBGA package constraints regarding board space and thermal dissipation capabilities.
Part Context
This SRAM belongs to the 71V65603 series, designed for embedded applications requiring fast random access. The family typically includes variants with different access times and packaging options. This specific model represents a high-speed variant optimized for complex digital signal processing tasks where low latency is critical.
Replacement Considerations
Check for IDT71V65603S150BGGI8 as a potential equivalent from the same manufacturer lineage. Verify pin-to-pin compatibility before substitution. Review datasheet differences for any changes in power consumption or timing parameters.
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