71V65603S150BQG

Overview

The 71V65603S150BQG is a synchronous Single Data Rate (SDR) Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 Megabits, organized as 256K words by 36 bits. The device supports parallel data interfaces and operates with a maximum clock frequency of 150 MHz, achieving a typical access time of 6.7 ns. It functions within a supply voltage range of 3.135 V to 3.465 V and is designed for commercial temperature environments ranging from 0°C to +70°C. The component is housed in a 165-pin Thin Plastic Ball Grid Array (TBGA) package.

Feature Summary

• Supports high-speed synchronous operation with Zero Bus Turnaround technology to maximize data throughput efficiency.
• Features a wide 36-bit data interface suitable for complex system architectures requiring high bandwidth.
• Designed for surface-mount installation using a compact ball grid array package format.

Applications

• High-performance embedded systems requiring fast memory access
• Network infrastructure equipment and telecommunications hardware
• Industrial control systems and automation controllers

Procurement Notes

Verify the specific suffix BQG against official Renesas documentation to confirm the exact pinout and electrical characteristics, as variations exist within the family. Confirm RoHS compliance status for your region, as some variants may differ. Check current production status, as this model may be subject to end-of-life notices or obsolescence. Ensure the supplier provides valid traceability documents for quality assurance purposes.

Selection Notes

Select this component when a 36-bit wide memory interface is required for high-speed data processing applications. Compare the 150 MHz speed grade against system timing requirements to ensure compatibility. Evaluate the TBGA package constraints against available PCB real estate and thermal management capabilities. Consider alternative speed grades if lower power consumption or different timing margins are necessary for the design.

Part Context

This part belongs to the 71V65603 series of synchronous ZBT SRAMs from Renesas. The series offers various speed grades and package options to support diverse memory subsystem designs. These devices are engineered to replace asynchronous SRAMs in high-speed digital logic applications, providing improved performance through synchronous clocking mechanisms while maintaining ease of integration.

Replacement Considerations

Official substitutes include the 71V65603S150BQGI for extended industrial temperature ranges. Verify pin-to-pin compatibility and electrical specifications before substitution.