71V65603S150BQI8

Overview

The 71V65603S150BQI8 is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It provides a total storage capacity of 9 megabits, organized as 256 kilowords by 36 bits. The device supports parallel interface operations with a maximum clock frequency of 150 MHz and features an access time of 3.8 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts. The component is housed in a 165-pin Column Grid Array package measuring 13x15 millimeters.

Feature Summary

• Supports high-speed synchronous parallel data transfer at up to 150 MHz
• Provides 36-bit wide data organization for efficient bus interfacing
• Utilizes low-voltage 3.3V operation for power efficiency
• Designed for surface-mount assembly in compact electronic systems

Applications

• High-performance computing systems requiring fast cache memory
• Network infrastructure equipment such as routers and switches
• Industrial automation control units
• Telecommunications base station hardware

Procurement Notes

Verify the specific suffix BQI8 against official Renesas documentation to confirm package type and moisture sensitivity level. Ensure compatibility with existing board layouts regarding the 165-CABGA footprint. Confirm that the 3.3V supply requirements align with the target system design. Check for any recent product change notifications or end-of-life announcements from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required. The 150 MHz speed rating suits applications needing rapid data access. Consider the 165-pin BGA package constraints during PCB layout. Verify that the operating temperature range meets the environmental conditions of the intended deployment site. Compare against other members of the 71V65603 family for alternative pinouts or speeds.

Part Context

This part belongs to the Renesas 71V65603 series of synchronous SRAM devices. The series offers various speed grades and packaging options to accommodate different design needs. The 71V65603S150BQI8 represents a specific configuration optimized for high-frequency operation. It shares architectural similarities with other parts in the lineup but differs in electrical timing and physical dimensions.

Replacement Considerations

Official substitutes include the 71V65603S150BQGI and 71V65603S133BQGI. These alternatives share the same memory organization and interface type. Verify pin compatibility and electrical specifications before swapping components.