— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
Download product information
Overview
The 71V65603S150PFGI8 is a 9 Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM) manufactured by Renesas Electronics. It features a memory organization of 256K x 36 bits and supports a maximum clock frequency of 150 MHz with an access time of 6.7 ns. The device operates on a single 3.3 V power supply, with voltage limits ranging from 3.135 V to 3.465 V. It utilizes a parallel interface and is housed in a 100-pin Thin Quad Flat Package (TQFP) with dimensions of 14x14 mm. The component is designed for surface mount installation and functions within a commercial temperature range of 0°C to +70°C.
Feature Summary
- Eliminates dead bus cycles during read-to-write or write-to-read transitions using Zero Bus Turnaround (ZBT) technology
- Supports high-speed synchronous data transfer via a single clock edge for efficient system bandwidth utilization
- Integrates on-chip clock buffers and data registers to ensure precise timing alignment and signal integrity
Applications
- High-performance computing systems requiring fast data buffering
- Telecommunications equipment needing reliable synchronous memory interfaces
- Network routers and switches utilizing wide data buses
Procurement Notes
Verify the current manufacturing status before procurement, as this specific part number may be obsolete or discontinued. Confirm that the 100-TQFP package dimensions match your PCB footprint requirements. Ensure the 3.3 V operating voltage aligns with your system's power rails. Check for moisture sensitivity levels if storage conditions are not controlled. Validate that the 150 MHz speed grade meets your design timing constraints.
Selection Notes
Select this component when a 36-bit wide data path is required for high-throughput applications. The 150 MHz speed grade offers a balance between performance and power consumption for commercial environments. Consider the TQFP package for prototyping or low-volume production due to ease of handling. Verify compatibility with existing ZBT protocol implementations in your controller design. Evaluate thermal dissipation capabilities within the 100-TQFP enclosure for your specific application load.
Part Context
This SRAM belongs to the 71V65603 series, which provides high-density memory solutions for demanding digital systems. The series is characterized by its zero bus turnaround capability, enhancing efficiency in bidirectional data transfers. Renesas designs these devices to meet the rigorous timing and reliability standards of modern communication and computing infrastructure.
Replacement Considerations
Public sources indicate the 71V65603S150PFGI8 is obsolete. Potential substitutes include the 71V65703S80PFGI8, though differences in speed grade and availability must be verified against official datasheets.
ChipApex | Global Electronic Components Supplier









