71V65603ZS133PF

Overview

The IDT 71V65603ZS133PF is a high-speed synchronous static random-access memory (SRAM) device organized as 256K words by 36 bits, providing a total storage capacity of 9 megabits. It operates with a maximum clock frequency of 133 MHz and features a typical access time of 4.2 nanoseconds. The component utilizes a single data rate (SDR) architecture with Zero Bus Transition (ZBT) technology to minimize power consumption during data transitions. It requires a core supply voltage range of 3.135 V to 3.465 V and supports parallel interface communication. The device is housed in a 100-pin Thin Quad Flat Pack (TQFP) surface-mount package suitable for automated assembly processes.

Feature Summary

• Supports high system speeds through synchronous operation at frequencies up to 133 MHz
• Integrates Zero Bus Transition (ZBT) technology to reduce dynamic power dissipation
• Features an internal burst address counter for sequential data access efficiency
• Includes self-timed write cycles controlled by global or byte-specific write enables

Applications

• High-performance networking equipment requiring low-latency data buffering
• Industrial control systems utilizing wide data bus architectures
• Telecommunications infrastructure supporting signal processing tasks
• Embedded computing platforms needing fast local memory expansion

Procurement Notes

Verify the specific suffix designation against current manufacturer documentation, as variations may indicate differences in packaging, temperature ratings, or RoHS compliance status. Confirm availability status directly with authorized distributors, as this component family may have reached end-of-life stages. Ensure that the procurement source provides valid traceability documents and original manufacturer certification to guarantee component authenticity and quality assurance standards.

Selection Notes

Select this component when a wide 36-bit data path is required alongside synchronous timing constraints. Evaluate the ZBT power savings against standard SDR alternatives for battery-sensitive applications. Ensure the design accommodates the 100-pin TQFP footprint and thermal requirements. Verify that the system logic can support the internal burst counter modes and pipelined output structures defined in the official datasheet specifications.

Part Context

This part belongs to the IDT 71V65603 series of 3.3V synchronous ZBT SRAMs. The series typically includes variants with different access times and package options, such as BGA or LQFP configurations. The 'S133' designation generally indicates the 133 MHz speed grade within this product line, distinguishing it from slower or faster operational variants available in the same memory organization family.

Replacement Considerations

Official substitutes include the IDT71V65603S133PFGI and Renesas Electronics equivalents like the 71V65603S133PFGI. Cross-reference pinouts and electrical characteristics carefully before substitution.