71V65703S75BG

71V65703S75BG

  • Description:IC SRAM 9MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:86b2f9292752 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:7.5 ns

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71V65703S75BG

Overview

The 71V65703S75BG is a 9 Mbit synchronous static random access memory (SRAM) organized as 256 k x 36 bits. It operates with a maximum access time of 7.5 ns and supports a clock frequency of 133 MHz. The device utilizes a parallel interface and functions within a supply voltage range of 3.135 V to 3.465 V. It is housed in a 119-pin PBGA package measuring 14x22 mm, designed for surface mount installation.

Feature Summary

  • Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
  • Flow-through architecture provides direct output without an output data register.
  • Includes address, data-in, and control signal registers for synchronous operation.
  • Supports burst mode to deliver four cycles of data for a single presented address.

Applications

  • High-performance embedded systems requiring fast memory access
  • Industrial equipment real-time engines
  • Network infrastructure solutions

Procurement Notes

Verify the specific suffix BG against the official Renesas datasheet to confirm the 119-PBGA package dimensions and pinout. Ensure the design accounts for the 3.3V I/O logic levels and the specified operating temperature range. Confirm RoHS compliance status directly with the manufacturer, as historical records may vary by production batch.

Selection Notes

Select this component when a 36-bit wide data path is required for high-speed synchronous applications. The ZBT feature makes it suitable for systems needing minimal latency between bus direction changes. Compare the 7.5 ns speed grade against other variants in the 71V65703 series if tighter timing constraints exist.

Part Context

This part belongs to the 71V65703 family of ZBT synchronous SRAMs from Renesas Electronics. These devices are engineered to replace asynchronous memories in high-speed designs, offering improved performance through synchronous clocking and zero wait-state turnaround capabilities.

Replacement Considerations

Publicly confirmed substitutes include 71V65703S80BG and 71V65703S75BG. Verify pin compatibility and electrical specifications before substitution.

71V65703S75BG71V65703S75BG

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