71V65703S75BG8

71V65703S75BG8

$17.22
  • Description:IC SRAM 9MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:04c52b1edcc1 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:7.5 ns

Download product information

71V65703S75BG8

Overview

The 71V65703S75BG8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It features a storage capacity of 9 Mbit, organized as 256K x 36 bits. The device operates with a maximum clock frequency of 117 MHz and provides an access time of 7.5 ns. It utilizes a parallel interface and requires a supply voltage range between 3.135 V and 3.465 V. The component is housed in a 119-pin PBGA package measuring 14x22 mm. It supports surface mount installation and functions within an operating temperature range of 0°C to +70°C.

Feature Summary

  • Zero bus turnaround architecture eliminates dead bus cycles during read-write transitions
  • Flow-through output configuration without output data registers for direct data availability
  • Integrated address, data-in, and control signal registers for synchronous operation
  • Burst mode capability providing four cycles of data for a single presented address

Applications

  • High-speed data buffering in communication systems
  • Cache memory implementation in embedded processors
  • FIFO buffer applications requiring low latency
  • Industrial equipment control systems

Procurement Notes

Verify the specific suffix BG8 against official Renesas documentation to confirm the 119-PBGA package and lead-free status. Confirm moisture sensitivity level requirements for your assembly process. Check current product lifecycle status as this series may be subject to discontinuation notices. Ensure compatibility with 3.3V logic levels in your target design.

Selection Notes

Select this component when zero bus turnaround performance is critical for system throughput. The 256K x 36 organization suits wide-data-path applications. Verify that the 119-pin BGA footprint fits your PCB constraints. Consider the 0°C to +70°C commercial temperature range against your environmental needs.

Part Context

This part belongs to the 71V65703 family of ZBT synchronous SRAMs. These devices are designed to replace asynchronous memories in high-performance systems. The family offers various speed grades and package options. The S75 suffix typically denotes the 7.5 ns access time variant within this product line.

Replacement Considerations

Check for IDT71V65703S75BG8 as a potential equivalent under prior branding. Verify pinout and electrical specifications match exactly before substitution.

71V65703S75BG871V65703S75BG8
$17.22
Buy Now