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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:7.5 ns
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Overview
The IDT 71V65703S75BGG is a 9Mb (256K x 36) synchronous SRAM IC manufactured by Integrated Device Technology. It operates at a maximum clock frequency of 117 MHz with a 7.5 ns access time. The device utilizes a parallel interface and features a flow-through architecture. It is housed in a 119-pin PBGA package measuring 14x22 mm. The component supports 3.3V power supply and I/O levels, designed for high-performance system applications requiring fast data turnaround.
Feature Summary
- Zero bus turnaround (ZBT) technology eliminates dead cycles between read and write operations.
- Flow-through output architecture provides immediate data availability without output registers.
- Internal burst counter supports four-word burst capability for sequential data access.
Applications
- High-speed cache memory systems
- Network infrastructure equipment
- Telecommunications base stations
Procurement Notes
Verify the specific suffix 'BGG' against official Renesas or IDT documentation to confirm the exact package type and tape/reel configuration. Confirm RoHS compliance status as manufacturing sources may have transitioned from IDT to Renesas Electronics. Check for end-of-life notices or product change notifications regarding substrate or labeling updates before finalizing procurement plans.
Selection Notes
Select this component when a 256K x 36 organization is required for wide-data bus architectures. The 7.5 ns speed grade suits systems operating up to 117 MHz. Ensure the design accommodates the 119-pin PBGA footprint and 3.3V logic levels. Consider thermal dissipation requirements associated with synchronous SRAM operation in dense PCB layouts.
Part Context
This part belongs to the IDT 71V65703 family of 3.3V Synchronous ZBT SRAMs. The family includes variants with different access times and packages. The 71V65703 series is characterized by its ability to handle mixed read/write cycles efficiently, making it suitable for complex data processing tasks in embedded systems.
Replacement Considerations
Check for direct substitutes within the 71V65703 series with different speed grades or packages. Verify pin compatibility if considering alternative vendors. Note that IDT memory products are now managed by Renesas Electronics; consult Renesas catalogs for current equivalents.
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