71V65703S75BGG8

Overview

The 71V65703S75BGG8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 megabits, organized as 256 kilowords by 36 bits. The device operates with a maximum clock frequency of 117 MHz and provides an access time of 7.5 nanoseconds. It utilizes a parallel interface and functions within a supply voltage range of 3.135 volts to 3.465 volts. The component is housed in a 119-pin plastic ball grid array package measuring 14mm by 22mm. It supports single data rate operation and is designed for surface mount installation.

Feature Summary

• Zero bus turnaround architecture eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Includes registers for address, data-in, and control signals to synchronize operations.
• Flow-through output configuration without output data registers allows direct data availability.

Applications

• High-performance networking equipment requiring fast data buffering
• Industrial automation systems needing reliable volatile memory
• Telecommunications infrastructure utilizing synchronous SRAM interfaces

Procurement Notes

Verify the specific suffix BGG8 against official Renesas documentation to confirm the 119-PBGA package and commercial temperature range. Confirm RoHS3 compliance status through current datasheets. Check for End-of-Life notices as production status may have changed. Ensure compatibility with existing PCB footprints for the 14x22mm PBGA form factor before procurement.

Selection Notes

Select this component when a 9Mb synchronous SRAM with 36-bit width is required for high-speed parallel data handling. The 7.5ns access time suits applications demanding low latency. Verify that the system design accommodates the 3.3V I/O levels and the specific thermal requirements of the PBGA package. Consider pinout compatibility if replacing older ZBT SRAM variants in existing designs.

Part Context

This part belongs to the 71V65703 family of Zero Bus Turnaround (ZBT) synchronous SRAMs. These devices are engineered to optimize bus efficiency in high-speed digital systems. The family typically offers various speed grades and packaging options to support diverse embedded memory needs in computing and communication hardware.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific model were not identified in the provided source material. Consult manufacturer cross-reference guides for potential alternatives.