71V65703S75BQ

71V65703S75BQ

$18.50
  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:5cf436234cc9 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:7.5 ns

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71V65703S75BQ

Overview

The Renesas Electronics Corporation 71V65703S75BQ is a 9Mbit (256K x 36) synchronous static random-access memory (SRAM) IC. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read/write transitions. The device operates on a single 3.3V power supply with an access time of 7.5 ns and supports burst mode operations for four data cycles per address. It features flow-through outputs without output registers and includes address, data-in, and control signal registers.

Feature Summary

  • Zero Bus Turnaround (ZBT) architecture eliminates dead bus cycles between read and write operations
  • Flow-through output configuration provides direct data access without output registers
  • Burst mode capability delivers four cycles of data for a single presented address
  • Integrated registers for address, data-in, and control signals

Applications

  • High-performance embedded systems requiring fast memory turnaround
  • Industrial network solutions needing reliable parallel SRAM interfaces
  • Data acquisition systems utilizing synchronous memory architectures

Procurement Notes

Verify component authenticity through authorized distributors due to potential obsolescence status. Confirm moisture sensitivity level (MSL 3) handling requirements before assembly. Check for specific RoHS compliance documentation relevant to the manufacturing date code. Ensure voltage supply stability within the 3.135V to 3.465V range during operation.

Selection Notes

Select this component when zero bus turnaround latency is critical for system performance. Compare against standard synchronous SRAMs if bus turnaround overhead cannot be tolerated. Consider the 256K x 36 organization for wide-data applications. Verify package compatibility with existing PCB layouts for the CABGA-165 form factor.

Part Context

This part belongs to the 71V65703/903 family of ZBT synchronous SRAMs from Renesas. It shares architectural similarities with other members like the 71V65703S85 series but offers faster 7.5 ns access times. The family is designed for high-speed parallel memory applications where bus efficiency is paramount.

Replacement Considerations

Publicly confirmed substitute part numbers include 71V65703S85BQG and 71V65703S85BQGI. These alternatives offer similar ZBT functionality but with 8.5 ns access times. Verify pinout and electrical specifications match before substitution.

71V65703S75BQ71V65703S75BQ
$18.50
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