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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:7.5 ns
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Overview
The 71V65703S75BQ8 is a 9 Mbit synchronous static random access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface and is organized as 256K x 36 bits. The device operates with a maximum clock frequency of 117 MHz and has an access time of 7.5 ns. It requires a supply voltage between 3.135 V and 3.465 V, with a maximum power consumption of 265 mA. The component is housed in a 165-pin CABGA package measuring 15.0 x 13.0 mm with a 1 mm pitch. It supports surface mount installation and functions within an operating temperature range of 0°C to +70°C.
Feature Summary
- Zero bus turnaround (ZBT) technology eliminates dead bus cycles during read-write transitions.
- Flow-through architecture provides direct output without data registers for low latency.
- Registers address, data-in, and control signals to synchronize operations.
Applications
- High-speed data buffering in industrial equipment
- Real-time engine control systems
- Network communication hardware
Procurement Notes
Verify the specific suffix BQ8 against official datasheets to confirm the 165-CABGA package and commercial temperature range. Confirm RoHS compliance status as documentation indicates variations across the product line. Check for end-of-life notices or production change notifications prior to procurement to ensure long-term availability.
Selection Notes
Select this component when a 36-bit wide synchronous SRAM is required for high-frequency applications up to 117 MHz. Ensure the design accommodates the 165-pin CABGA footprint and the 3.3V I/O logic levels. Verify that the thermal management strategy supports the specified 265 mA maximum current draw under operational conditions.
Part Context
This part belongs to the 71V65703 series of ZBT synchronous SRAMs from Renesas. It shares architectural similarities with other variants like the 71V65703S85BQG but offers faster access times. The series is designed for applications requiring rapid data turnover and minimal bus turnaround delays.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material.
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