71V65703S75BQG

Overview

The 71V65703S75BQG is a 9-Mbit synchronous static random-access memory (SRAM) device manufactured by Renesas Electronics Corporation. It features a parallel interface with a data organization of 256K x 36 bits. The component operates at a maximum clock frequency of 133 MHz, providing an access time of 7.5 ns. It requires a supply voltage range of 3.135 V to 3.465 V and supports surface-mount installation in a 165-pin CABGA package measuring 15.0 x 13.0 x 1.2 mm. The device is designed for industrial temperature ranges from -40°C to +85°C.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles during read-write transitions.
• Flow-through output architecture provides direct data access without output registers.
• Integrated address, data-in, and control signal registers for synchronous operation.
• Supports burst mode operations delivering four cycles of data per single address.

Applications

• High-speed data buffering in industrial equipment
• Real-time engine processing in automotive systems
• Network communication interface storage
• Embedded system cache memory

Procurement Notes

Verify current manufacturing status as the component may be obsolete or subject to production changes. Confirm package type compatibility and moisture sensitivity level requirements before integration. Check for official replacement part numbers such as the 71V65703 series variants if availability is limited. Ensure RoHS compliance matches project specifications.

Selection Notes

Select this component for applications requiring high-speed parallel SRAM with zero wait states. The 36-bit data width suits wide-bus architectures. Consider the 165-pin CABGA package for space-constrained designs. Verify thermal performance within the specified operating temperature range. Compare against newer ZBT SRAM alternatives for long-term supply assurance.

Part Context

This device belongs to the 71V65703 family of synchronous SRAMs designed for high-performance embedded applications. It utilizes CMOS technology and offers improved throughput compared to asynchronous counterparts. The ZBT feature distinguishes it from standard synchronous SRAMs by optimizing bus turnaround efficiency. It serves as a critical memory solution for real-time processing tasks.

Replacement Considerations

Official substitutes include the 71V65703S75BG and 71V65703S80BG. These variants maintain similar functional characteristics but may differ in package type or specific timing parameters. Verify pinout compatibility and electrical specifications before substitution.