71V65703S75BQG8

Overview

The 71V65703S75BQG8 is a 9 Mbit synchronous static random access memory (SRAM) organized as 256 k x 36. It features an 8 ns access time and operates at a maximum clock frequency of 117 MHz. The device utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. It is housed in a 165-pin CABGA package with dimensions of 15.0 mm by 13.0 mm. The component supports surface mount installation and functions within a commercial temperature range of 0°C to +70°C.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles during read-to-write or write-to-read transitions, enhancing system throughput.
• Flow-through architecture provides direct output data without additional registers, maintaining low latency for high-speed applications.
• Integrated address, data-in, and control signal registers ensure precise synchronization with the system clock.

Applications

• High-performance networking equipment requiring fast packet buffering
• Industrial automation systems needing reliable volatile memory storage
• Telecommunications infrastructure utilizing synchronous data processing

Procurement Notes

Verify the specific suffix BQG8 against official Renesas documentation to confirm the 165-pin CABGA package configuration and lead-free status. Ensure compatibility with moisture sensitivity level 3 handling procedures during assembly. Confirm that the 117 MHz clock requirement aligns with the target system design specifications before finalizing procurement orders.

Selection Notes

Select this component when a 36-bit wide data path is required for synchronous memory applications. The ZBT feature makes it suitable for designs prioritizing bus efficiency over raw speed compared to asynchronous alternatives. Consider the 165-pin footprint constraints and the 3.3V I/O compatibility with existing logic families in the target circuit architecture.

Part Context

This part belongs to the 71V65703 series of ZBT synchronous SRAMs from Renesas Electronics. The series is designed to replace faster asynchronous memories in high-density applications. The 75ns variant specifically targets systems requiring balanced performance and power consumption within the commercial temperature grade.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify cross-references with IDT-branded equivalents only if explicitly documented in current manufacturer notices.