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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:7.5 ns
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Overview
The 71V65703S75PFGI8 is a 9-Mbit synchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a memory organization of 256K x 36 bits. The device operates at a clock frequency of 133 MHz with an access time of 7.5 ns. It utilizes ZBT technology to eliminate dead bus cycles during read/write transitions. The component supports a supply voltage range of 3.135V to 3.465V and functions within a temperature range of -40°C to 85°C. It is housed in a 100-pin TQFP package.
Feature Summary
- Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles between read and write operations.
- Flow-through output architecture provides immediate data availability without output registers.
- Burst mode capability allows four cycles of data transfer for a single address presentation.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in network routers and switches
- Signal processing systems requiring low-latency data access
Procurement Notes
Verify the specific suffix PFGI8 against official Renesas documentation to confirm pinout and electrical characteristics, as suffixes define package type and temperature grade. Confirm RoHS compliance status through current datasheets, as manufacturing changes may occur. Check for End-of-Life notices or product discontinuance notifications prior to procurement planning.
Selection Notes
Select this component when a 36-bit wide data path is required for high-performance applications. Ensure the design accommodates the 3.3V I/O levels and the 100-TQFP thermal requirements. Compare against the 71V65703 series variants if different access times or packaging options are needed for the specific board layout constraints.
Part Context
This part belongs to the 71V65703 family of ZBT synchronous SRAMs. These devices are designed to replace asynchronous memories in high-speed digital systems. The family offers various speed grades and packaging options to suit different performance and form-factor requirements in embedded memory applications.
Replacement Considerations
Publicly confirmed substitute part numbers include 71V65703S80PFGI and 71V65703S85PFGI. Verify compatibility regarding access time differences and package dimensions before substitution.
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