71V65703S80BG

Overview

The 71V65703S80BG is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It features a storage capacity of 9 Mbit, organized as 256K words by 36 bits. The device utilizes a parallel interface with an access time of 8 ns and operates on a single 3.3 V power supply within the range of 3.135 V to 3.465 V. It is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. The component supports surface mount installation and functions within a commercial temperature range of 0°C to 70°C.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Flow-through architecture provides direct output data without additional output registers for low latency.
• Burst mode capability allows four cycles of data retrieval for a single address presentation.

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network routers and switches
• Data storage in industrial control systems requiring fast access

Procurement Notes

Verify the specific suffix against official Renesas documentation to confirm package type and speed grade. Confirm RoHS compliance status as some variants may differ. Check for moisture sensitivity level requirements during handling. Ensure the supplier provides valid traceability documents. Validate that the component matches the exact pinout and electrical specifications required for the target design.

Selection Notes

Select this component when zero bus turnaround performance is critical for system throughput. The 36-bit word width suits applications requiring wide data paths without external multiplexing. Consider the PBGA package constraints for PCB layout and thermal management. Verify that the 3.3 V I/O levels are compatible with the host processor or controller interface.

Part Context

This part belongs to the 71V65703 family of ZBT synchronous SRAMs. The family includes variants with different access times and packages, such as the 71V65703S85 series. These devices are designed to replace asynchronous SRAMs in high-performance embedded systems. The technology originated from Integrated Device Technology before being acquired by Renesas.

Replacement Considerations

Compatible substitutes include other members of the 71V65703 family with matching pinouts and electrical characteristics. Verify functional equivalence regarding burst mode and flow-through operation. Cross-reference pin assignments to ensure compatibility with existing board layouts.