71V65703S80BG

Overview

The IDT71V65703S80BG is a 9-Mbit Synchronous ZBT SRAM organized as 256K x 36. It operates with a 3.3V core and I/O supply, supporting clock frequencies up to 125 MHz with an 8 ns access time. The device utilizes a 119-ball BGA package and features burst counter flow-through outputs for high-performance data transfer.

Feature Summary

• Zero wait state (ZBT) architecture eliminates dead cycles between read and write operations
• Internal self-timed write cycle controlled by global write enable signals
• Burst counter generates sequential addresses for linear or interleaved access modes

Applications

• High-speed networking equipment requiring low-latency buffering
• Telecommunications systems utilizing synchronous memory interfaces
• Industrial control systems demanding reliable volatile storage

Procurement Notes

Verify the specific suffix 'BG' against official Renesas/IDT documentation to confirm pinout and package dimensions. Ensure compatibility with 3.3V logic levels and check for RoHS compliance status in current datasheets before integration into designs.

Selection Notes

Select this component when a 36-bit wide interface is required for parallel processing applications. The 8 ns speed grade suits systems operating at 125 MHz. Consider thermal dissipation requirements associated with the BGA package during PCB layout planning.

Part Context

This part belongs to the IDT 71V65703 family of synchronous static random-access memories. These devices are designed for embedded applications needing fast data throughput without complex controller overhead, serving as a bridge between processors and slower memory subsystems.

Replacement Considerations

Consult manufacturer cross-reference lists for direct replacements. Verify that alternative parts maintain the same 256K x 36 organization and 119-pin BGA footprint to ensure mechanical and electrical compatibility.