71V65703S80BG8

Overview

The 71V65703S80BG8 is a 9Mb synchronous static random access memory (SRAM) device manufactured by Renesas Electronics Corporation. It features a parallel interface with a data organization of 256K x 36 bits. The component operates at a maximum clock frequency of 100 MHz and provides an access time of 8 ns. It requires a supply voltage range of 3.135V to 3.465V. The device is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. It supports surface mount installation and functions within a temperature range of 0°C to 70°C.

Feature Summary

• Zero bus turnaround (ZBT) technology eliminates dead bus cycles during read-write transitions.
• Integrated address, data-in, and control signal registers for synchronous operation.
• Flow-through output architecture without output data registers.
• Burst mode capability providing four cycles of data for a single address.

Applications

• High-performance embedded systems requiring fast memory access
• Network infrastructure equipment
• Industrial automation controllers

Procurement Notes

Verify the specific suffix BG8 confirms the 119-PBGA(14x22) package and commercial temperature range. Confirm RoHS3 compliance status as required by project specifications. Check for End-of-Life notices or production discontinuation announcements from Renesas. Ensure moisture sensitivity level 3 handling protocols are followed during assembly. Validate that the parallel interface matches the target system bus requirements.

Selection Notes

Select this component when a 9Mb capacity with 36-bit word width is necessary. Choose based on the requirement for 8 ns access time and 100 MHz clock speed. Consider the 119-PBGA package for high-density surface mount applications. Verify compatibility with 3.3V logic levels and the specified operating temperature range. Evaluate ZBT benefits for reducing bus turnaround latency in synchronous designs.

Part Context

This part belongs to the 71V65703 family of zero bus turnaround SRAMs. It shares architectural similarities with other variants like the 71V65703S85 series but differs in package and timing specifications. The device utilizes CMOS technology for low power consumption while maintaining high-speed performance. It is designed to replace older asynchronous memories in high-bandwidth applications.

Replacement Considerations

Publicly confirmed substitute part numbers include 71V65703S85BQGI and 71V65703S80BGG8. Verify pinout and electrical compatibility before substitution. Note that alternative packages may require PCB layout adjustments.