71V65703S80BGG8

Overview

The Renesas Electronics Corporation 71V65703S80BGG8 is a synchronous single data rate (SDR) zero bus turnaround (ZBT) static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 9 megabits, organized as 256 kilowords by 36 bits. The device features a parallel interface with an access time of 8 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and is designed for surface-mount installation in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters.

Feature Summary

• Supports synchronous single data rate operation with zero bus turnaround capability for efficient data transfer.
• Utilizes a parallel interface architecture to facilitate high-speed communication with host processors.
• Designed for reliable performance across industrial temperature ranges.

Applications

• High-performance computing systems requiring fast data buffering
• Network infrastructure equipment needing low-latency memory
• Industrial control systems demanding robust volatile storage

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm package marking and date codes against official documentation. Ensure compliance with RoHS3 specifications during integration. Check for moisture sensitivity level handling requirements prior to assembly. Validate pin compatibility with existing board layouts.

Selection Notes

Select this component when synchronous ZBT SRAM functionality is required with specific 256K x 36 organization. Consider the 119-PBGA footprint constraints and 8 ns access speed requirements. Evaluate thermal management needs for the specified operating temperature range. Compare power consumption characteristics against alternative memory solutions.

Part Context

This part belongs to the 71V65703 family of synchronous SRAM devices from Renesas Electronics. It shares architectural similarities with other members like the 71V65703S85BQGI but differs in package type and specific timing parameters. The family targets applications requiring high-speed, wide-data-path memory solutions.

Replacement Considerations

Public confirmed substitute part numbers include 71V65603S150BQGI and IS64LF25636A-7.5B3LA3-TR. Verify electrical compatibility and pinout alignment before substitution.