71V65703S80BQ

Overview

The 71V65703S80BQ is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 megabits, organized as 256 kilowords by 36 bits. The device utilizes a parallel interface and operates with an access time of 8 nanoseconds. It functions within a supply voltage range of 3.135 volts to 3.465 volts. The component is housed in a 165-contact CABGA package measuring 13 by 15 millimeters. It supports an industrial operating temperature range from negative 40 degrees Celsius to positive 85 degrees Celsius.

Feature Summary

• Zero bus turnaround technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Includes registers for address, data-in, and control signals to synchronize operations.
• Provides flow-through outputs without additional output data registers.
• Supports burst mode operation delivering four cycles of data for a single address.

Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment needing low-latency memory
• Industrial control systems demanding wide temperature stability

Procurement Notes

Verify the specific suffix BQ against official Renesas documentation to confirm the exact package type and temperature grade. Confirm RoHS compliance status as historical records may vary. Check for active obsolescence notices or end-of-life declarations prior to procurement. Ensure the supplier provides valid traceability documents for this discontinued component.

Selection Notes

Select this component when zero bus turnaround performance is critical for system throughput. Compare against the 71V65703S85 series if slower access times are acceptable for cost reduction. Verify that the 36-bit word width matches the target system bus architecture. Ensure the CABGA package footprint fits the existing printed circuit board layout constraints.

Part Context

This part belongs to the 71V65703 family of ZBT synchronous SRAMs. These devices are designed to replace asynchronous memories in high-speed applications. The family offers various speed grades and package options to suit different design requirements. The 71V65703S80BQ represents a specific industrial-grade variant within this product line.

Replacement Considerations

Publicly confirmed substitute part numbers include 71V65703S85PFGI and 71V65703S85BGG. Verify pin compatibility and electrical specifications before substitution.