— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:8 ns
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Overview
The 71V65703S80BQ8 is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics Corporation. It features a total storage capacity of 9 megabits, organized as 256 kilowords by 36 bits. The device utilizes a parallel interface with an access time of 8 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and is housed in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters.
Feature Summary
- Zero bus turnaround technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
- Includes registers for address, data-in, and control signals to manage synchronous operations.
- Outputs are configured as flow-through without output data registers.
- Supports burst mode providing four cycles of data for a single presented address.
Applications
- High-performance real-time engine systems
- Industrial equipment requiring fast memory access
- General-purpose system control applications
Procurement Notes
Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status as some variants may not meet current environmental standards. Check moisture sensitivity level handling requirements before assembly. Validate package dimensions against design specifications. Ensure the specific suffix matches the required thermal and electrical characteristics for the target application.
Selection Notes
Select this component when zero bus turnaround latency is critical for system performance. Consider the 36-bit word width for wide data path requirements. Evaluate the 119-pin BGA footprint for PCB layout constraints. Compare operating temperature ranges if deployment exceeds commercial limits. Verify power consumption profiles against available supply capabilities.
Part Context
This part belongs to the 71V65703 series of ZBT synchronous SRAMs. The series is designed to optimize throughput in high-speed digital systems. It replaces older asynchronous designs where bus turnaround delays were significant bottlenecks. The family supports various packaging options to accommodate different board space and thermal management needs.
Replacement Considerations
- 71V65703S85BQGI
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