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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:8 ns
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Overview
The 71V65703S80BQG is a 9Mb (256K x 36) synchronous SRAM manufactured by Renesas Electronics Corporation. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read/write transitions. The device operates with a clock frequency of 125 MHz and features an access time of 8 ns. It supports a supply voltage range of 3.135V to 3.465V and functions within a temperature range of -40°C to 85°C. The component is housed in a 165-CABGA package.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead bus cycles between read and write operations
- Flow-through output configuration provides immediate data availability without output registers
- Integrated address, data-in, and control signal registers for synchronous operation
- Supports burst mode providing four cycles of data for a single address
Applications
- High-performance real-time engine systems
- Industrial equipment requiring fast memory access
- Network infrastructure applications
- Telecommunications base stations
Procurement Notes
Verify the specific suffix BQG against official Renesas documentation to confirm pinout and electrical characteristics. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Check for end-of-life notices or alternative package options if long-term supply is required.
Selection Notes
Select this component when ZBT speed is critical for system performance. Ensure the design accommodates the 3.3V I/O levels and the 165-pin CABGA footprint. Verify that the thermal management strategy supports the specified operating temperature range for industrial environments.
Part Context
This part belongs to the 71V65703 family of high-speed synchronous SRAMs. It is designed to replace asynchronous memories in high-speed digital systems where latency reduction is essential. The family offers various speed grades and package options to suit different board space and performance constraints.
Replacement Considerations
Official substitutes include 71V65703S85BQG and 71V65703S75BQG. These variants share the same organization and package but differ in access time specifications. Verify timing compatibility before substitution.
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