71V65703S80BQG8

Overview

The 71V65703S80BQG8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 megabits, organized as 256K words by 36 bits. The device utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read-write transitions. It operates with a maximum clock frequency of 100 MHz and an access time of 8 nanoseconds. The supply voltage range is specified from 3.135 volts to 3.465 volts. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package with dimensions of 14mm by 22mm.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles between read and write operations.
• Contains registers for address, data-in, and control signals to manage synchronous interface timing.
• Flow-through output architecture provides data without additional output register latency.
• Supports burst mode operation to deliver four cycles of data for a single presented address.

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network routers and switches
• Data acquisition systems requiring fast parallel access
• Industrial control units with synchronous processing requirements

Procurement Notes

Verify the specific suffix BQG8 against official Renesas documentation to confirm the 119-PBGA package and commercial temperature range. Confirm RoHS3 compliance status through current datasheets. Check for End-of-Life notices or Product Change Notifications regarding assembly sites or labeling changes before finalizing procurement plans.

Selection Notes

Select this component when a 9Mb synchronous SRAM with a 36-bit word width is required. Ensure the design supports the 3.3V I/O logic levels and the 3.135V to 3.465V power supply range. Verify that the PCB layout accommodates the 119-ball PBGA footprint and thermal requirements for surface mount installation.

Part Context

This part belongs to the 71V65703 family of ZBT synchronous SRAMs. It shares architectural similarities with other variants in the series but differs in package type and speed grade. The 71V65703 series is designed for applications demanding high throughput and low latency in parallel memory interfaces.

Replacement Considerations

Publicly confirmed substitute part numbers include 71V65703S85BQGI and 71V65703S80BGG8. Verify pin compatibility and electrical specifications before substitution.