71V65703S80BQGI

Overview

The 71V65703S80BQGI is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 megabits, organized as 256K words by 36 bits. The device utilizes a parallel interface with an access time of 8 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and supports surface mount installation in a 119-pin plastic ball grid array package measuring 14x22 millimeters.

Feature Summary

• Zero bus turnaround technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Includes registers for address, data-in, and control signals to optimize data throughput.
• Flow-through output architecture provides data without additional output registration latency.

Applications

• High-performance computing systems requiring fast memory access
• Network infrastructure equipment
• Industrial automation controllers

Procurement Notes

Verify component authenticity through authorized channels due to potential availability constraints. Confirm RoHS3 compliance status and moisture sensitivity level requirements before integration. Check for recent product change notifications regarding packaging or labeling updates. Ensure compatibility with existing board design parameters and thermal management solutions.

Selection Notes

Select this component for designs requiring 36-bit wide data paths and synchronous operation. Compare access times and power consumption against alternative SRAM families. Evaluate package dimensions against available PCB real estate. Consider end-of-life status when planning long-term production runs.

Part Context

This part belongs to the 71V65703 family of high-speed synchronous SRAMs. The series is designed for applications demanding low latency and high bandwidth. The specific suffix indicates package type and temperature range variations within the broader product line.

Replacement Considerations

• 71V65703S80BGG8