71V65703S80BQI8

Overview

The Renesas Electronics Corporation 71V65703S80BQI8 is a synchronous static random-access memory (SRAM) integrated circuit belonging to the ZBT family. It features a storage capacity of 9 Megabits, organized as 256K words by 36 bits. The device utilizes a parallel interface with an access time of 8 nanoseconds and operates on a single 3.3V power supply within a voltage range of 3.135V to 3.465V. It is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm. The component supports industrial temperature ranges from 0°C to 70°C and includes registers for address, data-in, and control signals.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Flow-through output architecture provides direct data access without additional output registers.
• Integrated registers for address, data-in, and control signals enhance system timing flexibility.

Applications

• High-performance real-time engine systems
• Industrial equipment requiring fast memory access
• Embedded systems utilizing 32-bit microcontrollers

Procurement Notes

Verify the exact suffix configuration against official Renesas documentation, as variations such as BGG8 indicate different packaging or environmental ratings. Confirm current manufacturing status, as many variants in this series have reached end-of-life. Ensure compatibility with existing PCB footprints for the 119-PBGA package before procurement.

Selection Notes

Select this component when zero bus turnaround performance is critical for system efficiency. The 36-bit word width suits applications requiring wide data buses. Verify that the 119-PBGA package fits the design constraints and that the 0°C to 70°C operating temperature meets the environmental requirements of the target application.

Part Context

This part belongs to the 71V65703/903 series of high-speed SRAMs designed for demanding embedded applications. The series is characterized by its ability to maintain high throughput without the latency penalties associated with traditional synchronous memories. It serves as a key memory solution for processors needing rapid data retrieval and storage capabilities.

Replacement Considerations

Official substitutes include the 71V65703S85BQGI and IS64LF25636A-7.5B3LA3-TR. Verify pinout compatibility and electrical specifications before substitution. Note that some alternatives may differ in package type or operating temperature range.