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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:8 ns
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Overview
The 71V65703S80PFG is a 9Mb (256K x 36) synchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read/write transitions. The device operates with a maximum clock frequency of 100 MHz and features an access time of 8 ns. It requires a supply voltage range of 3.135V to 3.465V and supports surface-mount installation in a 100-TQFP package measuring 14x14 mm.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead bus cycles between read and write operations
- Flow-through output configuration without output data registers for direct data availability
- On-chip address, data-in, and control signal registers for synchronous operation
- Burst mode capability providing four cycles of data for a single presented address
Applications
- High-speed parallel interface systems requiring zero wait states
- Network equipment buffer memory applications
- Industrial control systems utilizing ZBT SRAM technology
- Embedded processing units requiring fast synchronous data storage
Procurement Notes
Verify component authenticity through authorized channels as the part may be discontinued. Confirm package integrity and moisture sensitivity level handling procedures before assembly. Cross-reference datasheet specifications against current design requirements to ensure compatibility with existing system architectures and power supplies.
Selection Notes
Select this component for designs requiring high-speed parallel data transfer with minimal latency. Ensure the printed circuit board layout accommodates the 100-TQFP footprint dimensions. Verify that the system power supply maintains the required voltage range of 3.135V to 3.465V for stable synchronous operation at 100 MHz clock speeds.
Part Context
This device belongs to the 71V65703 family of synchronous SRAMs designed for high-performance embedded applications. The family shares common ZBT technology and flow-through architecture principles. Variations within the series typically differ in access times, package types, and temperature ratings while maintaining the same core memory organization and interface protocols.
Replacement Considerations
Consider the 71V65703S85PFGI or 71V65703S80BGG8 as potential substitutes. Verify pinout compatibility and electrical parameter alignment before implementation. Ensure the replacement part meets the specific thermal and packaging requirements of the target application.
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