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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:8 ns
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Overview
The 71V65703S80PFG8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 megabits, organized as 256 kilowords by 36 bits. The device utilizes a parallel interface and operates with an access time of 8 nanoseconds. It is designed for single data rate zero bus turnaround (ZBT) applications. The component supports a supply voltage range of 3.135 volts to 3.465 volts and is housed in a 119-pin plastic ball grid array package.
Feature Summary
- Zero Bus Turnaround technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
- Flow-through output architecture provides immediate data availability without output registers.
- Integrated address, data-in, and control signal registers enhance system performance.
- Burst mode capability allows four cycles of data transfer for a single presented address.
Applications
- High-performance embedded systems requiring fast memory access
- Network infrastructure equipment
- Industrial automation controllers
Procurement Notes
Verify the specific suffix PFG8 against official Renesas documentation to confirm the 119-PBGA package configuration. Confirm RoHS3 compliance status through current datasheets. Check for End-of-Life notices as this series has faced discontinuation actions. Ensure compatibility with existing PCB footprints for the 119-ball BGA format before procurement.
Selection Notes
Select this component when a 9Mb synchronous SRAM with ZBT functionality is required. The 8ns access speed suits high-frequency parallel interfaces. Consider the 119-pin BGA package constraints for board layout. Verify that the 3.3V I/O levels match the target system logic requirements.
Part Context
This part belongs to the 71V65703 family of synchronous SRAMs. It shares architectural similarities with other variants like the 71V65703S85 but offers faster 8ns timing. The family is characterized by its flow-through design and ZBT efficiency, targeting applications needing low-latency memory solutions.
Replacement Considerations
Publicly confirmed substitute part numbers include 71V65703S85PFGI and 71V65703S80BGG8. Verify pinout and electrical specifications against the original datasheet before substitution.
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