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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:8.5 ns
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Overview
The 71V65703S85BG is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 Megabits, organized as 256K words by 36 bits. The device utilizes a parallel interface with an access time of 8.5 nanoseconds and operates within a supply voltage range of 3.135 to 3.465 volts. It is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 millimeters. The component supports Zero Bus Turnaround (ZBT) technology for efficient data transfer.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead bus cycles during read-to-write or write-to-read transitions.
- Flow-through output configuration provides immediate data availability without additional output registers.
- Burst mode capability allows four cycles of data retrieval for a single address presentation.
Applications
- High-performance embedded systems requiring fast parallel memory access
- Network infrastructure equipment utilizing synchronous SRAM interfaces
- Industrial control applications needing reliable volatile data storage
Procurement Notes
Verify the specific suffix designation against official Renesas documentation to confirm pinout compatibility and electrical characteristics. Confirm current manufacturing status as legacy components may have limited availability. Ensure environmental compliance requirements match project specifications before procurement.
Selection Notes
Select this component when a 36-bit wide parallel interface is required for system integration. The 8.5 ns access time suits applications demanding moderate-speed synchronous memory operations. Verify that the 119-pin PBGA footprint aligns with existing PCB layout constraints and thermal management strategies.
Part Context
This part belongs to the 71V65703 series of ZBT synchronous SRAMs. It shares architectural similarities with other variants in the family but differs in speed grade and packaging. The device represents a solution for systems transitioning from asynchronous memories to faster synchronous alternatives while maintaining parallel interface simplicity.
Replacement Considerations
Officially documented similar replacements include the 71V65703S75BG and 71V65703S80BG. These alternatives offer different access times while maintaining the same organizational structure and interface type. Verify pin compatibility and timing parameters before substitution.
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