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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:8.5 ns
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Overview
The 71V65703S85BG8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 Megabits, organized as 256K words by 36 bits. The device utilizes a parallel interface with an access time of 8.5 nanoseconds and operates on a single 3.3V power supply within the range of 3.135V to 3.465V. It is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm. The component supports Zero Bus Turnaround (ZBT) technology for efficient data transfer.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead bus cycles during read-to-write or write-to-read transitions.
- Flow-through output configuration provides immediate data availability without output registers.
- Burst mode capability allows four cycles of data retrieval for a single address presentation.
Applications
- High-speed digital signal processing systems
- Network infrastructure equipment requiring low-latency buffering
- Industrial control systems utilizing synchronous memory interfaces
Procurement Notes
Verify the specific suffix BG8 against official Renesas documentation to confirm the 119-PBGA package and lead-free status. Confirm current manufacturing status as this series may have discontinuation notices. Ensure compatibility with 3.3V logic levels and check moisture sensitivity classification before assembly.
Selection Notes
Select this component when a 36-bit wide synchronous SRAM interface is required for high-performance applications. The ZBT feature is critical for systems needing minimal turnaround latency between bidirectional data transfers. Verify that the 119-ball BGA footprint fits the target PCB design constraints.
Part Context
This part belongs to the 71V65703 family of ZBT synchronous SRAMs. It shares architectural similarities with other variants like the 71V65703S85BQI but differs in packaging and thermal characteristics. The family is designed for applications demanding fast, reliable memory access with reduced bus contention.
Replacement Considerations
Potential substitutes include the 71V65703S85BQGI and 71V65603S150BQGI from Renesas. Cross-reference pinouts and electrical specifications carefully, as package differences may require adapter solutions or redesigns.
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