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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:8.5 ns
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Overview
The 71V65703S85BGG is a synchronous SDR ZBT SRAM IC manufactured by Renesas Electronics Corporation. It features a storage capacity of 9Mb organized as 256K x 36 bits with parallel interface. The device has an access time of 8.5 ns and operates on a supply voltage range of 3.135V to 3.465V. It is housed in a 119-PBGA package measuring 14x22 mm and supports a commercial operating temperature range of 0°C to 70°C.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead bus cycles during read-to-write or write-to-read transitions.
- Contains dedicated address, data-in, and control signal registers for synchronous operation.
- Flow-through output configuration provides data without additional output registration latency.
Applications
- High-performance embedded systems requiring fast memory turnaround
- Network infrastructure equipment utilizing parallel SRAM interfaces
- Industrial control applications within commercial temperature ranges
Procurement Notes
Verify the specific suffix BGG against official Renesas documentation to confirm the 119-PBGA(14x22) package type and commercial temperature grade. Ensure compatibility with 3.3V I/O requirements and check for moisture sensitivity level constraints during handling. Confirm that the ZBT protocol matches the system controller's interface specifications before procurement.
Selection Notes
Select this component when zero bus turnaround performance is critical for system efficiency. The 256K x 36 organization suits wide-data-path applications. Verify that the 8.5 ns access time meets the target clock frequency requirements. Ensure the PCB layout accommodates the 119-PBGA footprint and thermal dissipation needs for the 0°C to 70°C operating range.
Part Context
This part belongs to the 71V65703 family of 3.3V CMOS SRAMs designed for high-speed parallel data processing. The family utilizes ZBT technology to optimize bus utilization. The 71V65703S85 variant specifically targets the 8.5 ns speed grade, offering a balance between performance and power consumption for standard commercial electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas official documentation for potential cross-references or updated series replacements.
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