71V65703S85BGG8

Overview

The 71V65703S85BGG8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 Megabits, organized as 256K words by 36 bits. The device utilizes a parallel interface with an access time of 8 nanoseconds and operates within a supply voltage range of 3.135V to 3.465V. It is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm. The component supports surface mount installation and functions within an ambient temperature range of 0°C to 70°C.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Flow-through architecture provides direct output data without internal output registers for low latency.
• Integrated address, data-in, and control signal registers ensure precise synchronous operation.

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in embedded systems
• Data acquisition systems requiring rapid burst mode access

Procurement Notes

Verify the specific suffix BGG8 against current manufacturer documentation, as this part number indicates end-of-life status. Confirm moisture sensitivity level (MSL 3) requirements for handling and reflow soldering processes. Check for official replacement recommendations from Renesas due to discontinuation. Ensure RoHS3 compliance matches project specifications before procurement.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required for legacy or specific system architectures. The ZBT feature is critical for applications needing minimal turnaround time between bus directions. Consider the PBGA package constraints and thermal characteristics relative to the PCB layout. Evaluate alternative pin-compatible or functionally similar parts if long-term supply stability is a priority.

Part Context

This device belongs to the 71V65703 family of high-performance synchronous SRAMs. It is designed for applications demanding fast data throughput and efficient bus utilization. The ZBT technology distinguishes it from standard synchronous memories by removing wait states during direction changes. The 36-bit organization suits error-correction code (ECC) implementations or wide-data-path processors.

Replacement Considerations

• 71V65703S80BGG8