71V65703S85BQ8

Overview

The 71V65703S85BQ8 is a 9Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a memory organization of 256K x 36 bits and an access time of 8.5 ns. The device operates within a supply voltage range of 3.135V to 3.465V and is housed in a 165-CABGA package measuring 13x15 mm.

Feature Summary

• Supports synchronous single data rate operations for high-speed data transfer
• Provides wide 36-bit data bus width for efficient processing integration
• Utilizes zero-bus-turnaround architecture to minimize latency

Applications

• High-performance networking equipment
• Telecommunications infrastructure systems
• Industrial control applications requiring fast memory access

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS3 compliance and moisture sensitivity level 3 handling requirements during storage and assembly. Ensure compatibility with existing PCB footprints and power supply specifications before procurement.

Selection Notes

Select this component for designs requiring 9Mbit capacity with 36-bit width. Consider the 8.5 ns access speed and CABGA package constraints. Evaluate alternative packages if pin count or thermal performance differs from current design requirements.

Part Context

This part belongs to the 71V65703 family of synchronous SRAMs. It shares architectural similarities with other variants in the series, differing primarily in access speed, package type, and operating temperature range. The CABGA variant offers specific mechanical advantages for surface mount applications.

Replacement Considerations

Public confirmed substitute part numbers include 71V65603S150BQGI and IS64LF25636A-7.5B3LA3-TR. Verify electrical compatibility and pinout alignment when substituting.