71V65703S85BQG

71V65703S85BQG

$18.50
  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:0f0d542615a2 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:8.5 ns

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71V65703S85BQG

Overview

The 71V65703S85BQG is a synchronous Single Data Rate Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 Megabits, organized as 256K words by 36 bits. The device utilizes a parallel interface with an access time of 8.5 nanoseconds and operates within a supply voltage range of 3.135V to 3.465V. It is housed in a 165-pin CABGA package measuring 13x15 mm and supports an industrial operating temperature range from -40°C to +85°C.

Feature Summary

  • Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
  • Includes registers for address, data-in, and control signals to optimize system performance.
  • Flow-through output architecture provides direct data access without additional output registers.
  • Supports burst mode operations delivering four cycles of data for a single address.

Applications

  • High-performance embedded systems requiring fast memory turnaround
  • Industrial control applications operating in extended temperature ranges
  • Network infrastructure equipment utilizing parallel SRAM interfaces
  • Automotive electronics systems demanding reliable volatile memory

Procurement Notes

Verify component authenticity through authorized channels due to potential obsolescence status. Confirm RoHS compliance and moisture sensitivity level requirements before integration. Check specific suffix designations against official datasheets to ensure correct package and temperature grade alignment. Validate lead-free specifications for assembly processes.

Selection Notes

Select this component when zero bus turnaround latency is critical for system throughput. Ensure the host controller supports synchronous SDR parallel protocols. Verify that the 165-pin CABGA footprint matches the PCB layout constraints. Confirm power supply stability within the specified voltage window to maintain signal integrity.

Part Context

This part belongs to the 71V65703 family of ZBT SRAM devices designed for high-speed data processing. It shares architectural similarities with other members like the 71V65703S85BQGI but differs in packaging and environmental ratings. The series targets applications needing dense, fast memory without pipeline register delays.

Replacement Considerations

Publicly confirmed substitute part numbers include 71V65603S150BQGI and IS64LF25636A-7.5B3LA3-TR. Evaluate these alternatives based on pin compatibility and electrical parameter matching.

FAQ

Does the 71V65703S85BQG have output data registers?

No, the device features a flow-through output architecture with no output data registers.

What is the maximum clock frequency for this SRAM?

The maximum clock frequency is 87 MHz, corresponding to the 8.5 ns access time.

71V65703S85BQG71V65703S85BQG
$18.50
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