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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:8.5 ns
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Overview
The 71V65703S85BQGI is a 9Mb synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a parallel interface and is organized as 256K x 36 bits. The device utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read/write transitions. Key electrical parameters include an access time of 8.5 ns, a supply voltage range of 3.135V to 3.465V, and a maximum power supply current of 60 mA. It operates within a temperature range of -40°C to +85°C and is housed in a 165-CABGA package measuring 13x15 mm.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead bus cycles between read and write operations.
- Contains registers for address, data-in, and control signals to optimize data throughput.
- Supports burst mode operation providing four cycles of data for a single address.
- Outputs are flow-through without an output data register.
Applications
- High-performance embedded systems requiring fast data buffering
- Network infrastructure equipment with parallel memory interfaces
- Industrial control systems operating in extended temperature ranges
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS3 compliance and moisture sensitivity level (MSL 3) requirements for surface-mount assembly. Check for valid replacement part numbers such as 71V65603S150BQGI if sourcing new inventory is not feasible. Ensure packaging integrity matches the 165-CABGA specification.
Selection Notes
Select this component when ZBT speed and 36-bit data width are required for parallel SRAM applications. Compare against alternatives based on access time, package dimensions, and operating temperature range. Verify that the 3.3V I/O logic levels match the system design constraints. Consider the 165-pin CABGA footprint for PCB layout compatibility.
Part Context
This device belongs to the 71V65703 family of synchronous SRAMs designed for high-speed data processing. It is part of Renesas' portfolio of memory solutions utilizing CMOS technology. The product is identified by the base number 71V65703 with specific suffixes indicating speed grade and package type.
Replacement Considerations
Publicly confirmed substitute part numbers include 71V65603S150BQGI and IS64LF25636A-7.5B3LA3-TR. Verify pinout and electrical specifications before substitution.
FAQ
What is the organization of the 71V65703S85BQGI memory?
The memory is organized as 256K words by 36 bits.
Does the 71V65703S85BQGI have an output data register?
No, the outputs are flow-through without an output data register.
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