71V65703S85BQI

Overview

The Renesas Electronics Corporation 71V65703S85BQI is a 9 Mbit synchronous static random-access memory (SRAM) organized as 256 k x 36. It features an 8.5 ns access time and operates on a parallel interface with a 3.3 V supply voltage ranging from 3.135 V to 3.465 V. The device utilizes ZBT technology for zero bus turnaround efficiency. It is housed in a 165-CABGA surface-mount package, supports SDR storage type, and functions within a temperature range of -40°C to +85°C.

Feature Summary

• Zero Bus Turnaround (ZBT) architecture eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Integrated address, data-in, and control signal registers for synchronized operation.
• Flow-through output configuration without output data registers.
• Supports burst mode providing four cycles of data for a single presented address.

Applications

• High-performance embedded systems requiring fast memory access
• Network infrastructure equipment
• Industrial automation controllers
• Telecommunications base stations

Procurement Notes

Verify RoHS compliance status as sources indicate conflicting information regarding lead-free specifications. Confirm moisture sensitivity level (MSL 3) handling requirements before assembly. Check for obsolescence notices or product change notifications affecting the specific manufacturing date code. Ensure the supplier provides valid traceability documentation for the CABGA-165 package variant.

Selection Notes

Select this component when a 36-bit wide data path is required for high-speed parallel processing. The 8.5 ns speed grade suits applications needing moderate latency with low power consumption compared to faster asynchronous alternatives. Consider the 165-pin CABGA package constraints for PCB layout density and thermal management capabilities in enclosed industrial environments.

Part Context

This part belongs to the 71V65703 series of ZBT synchronous SRAMs from Renesas. It shares architectural similarities with other members like the 71V65703S85PFGI but differs in package type and pinout compatibility. The series is designed to replace older asynchronous memories in high-throughput data paths while maintaining software compatibility.

Replacement Considerations

Publicly confirmed substitute part numbers include 71V65603S150BQGI and IS64LF25636A-7.5B3LA3-TR. Verify electrical compatibility and pin mapping before substitution.

FAQ

Does the 71V65703S85BQI have output data registers?

No, the device features a flow-through output configuration without output data registers.

What is the maximum operating temperature for this SRAM?

The maximum operating temperature is +85°C.