71V65703S85BQI

71V65703S85BQI

$21.00
  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk

SKU:06052b61bfd9 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:256K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:8.5 ns

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71V65703S85BQI

Overview

The IDT71V65703S85BQI is a 9 Mbit Synchronous Zero Bus Turnaround (ZBT) Static Random Access Memory organized as 256 k x 36. It operates with a maximum access time of 8.5 ns and supports clock frequencies up to 87 MHz. The device utilizes a parallel interface and functions within a supply voltage range of 3.135 V to 3.465 V. It is housed in a 165-pin CABGA surface-mount package and is rated for an operating temperature range from -40°C to +85°C.

Feature Summary

  • Zero Bus Turnaround architecture eliminates dead cycles between read and write operations
  • Internally synchronized output buffer enable removes the need for external Output Enable control
  • Supports four-word burst capability with interleaved or linear modes
  • Flow-through output architecture provides direct data access without output registers

Applications

  • High-performance embedded systems requiring fast memory turnaround
  • Network infrastructure equipment utilizing synchronous SRAM interfaces
  • Industrial control applications operating in extended temperature ranges
  • Telecommunications hardware demanding low-latency data processing

Procurement Notes

Verify component authenticity through authorized Renesas Electronics distribution channels, as IDT assets are managed under this entity. Confirm specific ordering suffixes match required packaging formats such as tray quantities. Ensure compliance with RoHS directives if lead-free variants are mandated for the target assembly process. Validate moisture sensitivity levels prior to soldering to prevent damage during reflow.

Selection Notes

Select this component when system designs require eliminating bus turnaround delays inherent in standard synchronous memories. The 256 k x 36 organization suits wide-data-path applications like networking processors. Verify that the 3.3V I/O logic levels align with the host controller specifications. Consider the CABGA-165 package constraints regarding PCB real estate and thermal dissipation requirements for the specific enclosure design.

Part Context

This part belongs to the IDT71V65703/903 family of 3.3V Synchronous ZBT SRAMs. The series includes variations with different organizations, such as 512 k x 18 configurations. These devices are designed to support high-speed system operations by removing the latency associated with traditional synchronous memory architectures, making them suitable for bandwidth-intensive environments.

Replacement Considerations

The IDT71V65703S85BQI may be cross-referenced with the Renesas 71V65703S85BQI due to corporate asset integration. Verify pin compatibility and electrical characteristics against alternative ZBT SRAM offerings from other manufacturers before substitution.

71V65703S85BQI71V65703S85BQI
$21.00
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