71V65703S85BQI8

Overview

The 71V65703S85BQI8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 megabits, organized as 256K words by 36 bits. The device utilizes a parallel interface with an access time of 8.5 nanoseconds and operates within a supply voltage range of 3.135 volts to 3.465 volts. It is housed in a 165-pin CABGA package measuring 13x15 millimeters. The component supports surface mount installation and functions within a temperature range of -40°C to 85°C.

Feature Summary

• Zero bus turnaround (ZBT) technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Includes registers for address, data-in, and control signals to optimize data throughput.
• Flow-through output architecture provides direct data access without additional output registers.
• Supports burst mode operations delivering four cycles of data for a single presented address.

Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment needing low-latency memory
• Industrial control systems demanding reliable volatile storage
• Telecommunications hardware utilizing synchronous parallel interfaces

Procurement Notes

Verify the specific suffix BQI8 against official Renesas documentation to confirm package type and moisture sensitivity level. Confirm RoHS compliance status as historical records indicate variations across the product line. Check for end-of-life notices or production change notifications that may affect long-term availability. Ensure the ordering part number matches the exact electrical and mechanical specifications required for the design.

Selection Notes

Select this component when zero bus turnaround performance is critical for system efficiency. The 36-bit word width suits applications requiring wide data paths without external multiplexing. Verify that the 165-pin CABGA footprint fits the printed circuit board layout constraints. Consider the operating temperature range if the environment exceeds standard commercial limits. Compare power consumption characteristics against alternative SRAM families for energy-sensitive designs.

Part Context

This device belongs to the 71V65703 family of synchronous ZBT SRAMs from Renesas. The family shares common architectural features including flow-through outputs and burst mode capabilities. Variations within the series typically differ by access speed, package style, and temperature rating. The 71V65703 series is designed to replace asynchronous SRAMs in high-speed digital logic applications.

Replacement Considerations

Publicly confirmed substitute part numbers include 71V65603S150BQGI and IS64LF25636A-7.5B3LA3-TR. Verify pin compatibility and electrical parameters before substitution. Ensure the replacement device meets the same package and thermal requirements.