71V65703S85PFG

Overview

The 71V65703S85PFG is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 9 megabits, organized as 256 kilowords by 36 bits. The device operates with a maximum clock frequency of 100 MHz and provides an access time of 8.5 nanoseconds. It utilizes a parallel interface and functions within a supply voltage range of 3.135 volts to 3.465 volts. The component is housed in a 100-pin Thin Quad Flat Package (TQFP) measuring 14x20 millimeters and supports an operating temperature range from -40°C to +85°C.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Flow-through output architecture ensures data availability without additional latency cycles.
• Integrated registers for address, data-in, and control signals enhance synchronization efficiency.

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in embedded processing systems
• Data acquisition systems requiring rapid burst mode access

Procurement Notes

Verify the specific suffix designation against official documentation, as standard listings often reference the 71V65703S85PFGI variant. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration. Check for end-of-life notices or production change notifications that may affect long-term availability and sourcing strategies.

Selection Notes

Select this component when designing systems requiring high-density 36-bit wide memory interfaces with synchronous timing constraints. Ensure the printed circuit board layout accommodates the 100-TQFP package dimensions and thermal requirements. Validate that the system power supply maintains the specified voltage range under all load conditions to guarantee reliable operation.

Part Context

This part belongs to the 71V65703 family of ZBT synchronous SRAMs, designed to replace asynchronous memories in high-performance applications. The series offers improved throughput compared to traditional SRAMs by utilizing clocked inputs and outputs. It serves as a critical component for reducing system latency in complex digital signal processing and networking architectures.

Replacement Considerations

Officially documented substitutes include the 71V65703S85PFGI and the 71V65703S85BQGI. Verify pin compatibility and electrical specifications before substituting, as package types differ between TQFP and BGA variants.