71V65803S100BG

Memory IC Overview

The Renesas Electronics Corporation 71V65803S100BG is a synchronous single-data-rate zero-bus-turnaround (ZBT) static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 9 megabits, organized as 512 kilowords by 18 bits. The device supports parallel interface operations with a maximum clock frequency of 100 MHz and features a typical access time of 5 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 millimeters.

Memory IC Feature Summary

• Supports high-speed synchronous parallel data transfer using ZBT technology for efficient bus utilization.
• Integrates pipelined architecture to maintain high throughput at clock frequencies up to 100 MHz.
• Designed for low-voltage operation compatible with standard 3.3V logic systems.

Memory IC Applications

• High-performance embedded systems requiring fast local memory access
• Network infrastructure equipment such as routers and switches
• Industrial control systems demanding reliable volatile data storage

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to the product's obsolete status. Confirm that the specific suffix matches the required package and environmental specifications. Review official Product Change Notices for any substrate or labeling updates issued prior to discontinuation. Ensure compatibility with existing board designs regarding pinout and electrical characteristics before procurement.

Memory IC Selection Notes

Select this component when a 9Mb density with 18-bit word width is required for synchronous applications. The 119-PBGA package suits space-constrained surface-mount designs. Consider the 5ns access time for timing-critical paths. Evaluate alternative packages like the BG8 variant if tape-and-reel packaging is preferred over trays for assembly processes.

Memory IC Part Context

This part belongs to the 71V65803 family of synchronous SRAMs from Renesas. It shares architectural similarities with other members like the 71V65603 but differs in organization and package type. The series is characterized by its use of advanced CMOS technology to deliver high speed and low power consumption in a compact form factor suitable for dense electronic assemblies.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As the product is marked as obsolete, direct replacements may require design modifications. Engineers should consult Renesas technical support for current equivalent recommendations or assess legacy stock availability.