71V65803S100BGG

Overview

The Renesas Electronics Corporation 71V65803S100BGG is a synchronous single data rate (SDR) zero bus turnaround (ZBT) static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 9 megabits, organized as 512 kilowords by 18 bits. The device operates with a maximum clock frequency of 100 MHz and features a typical access time of 5 nanoseconds. It utilizes a parallel interface and requires a supply voltage ranging from 3.135 volts to 3.465 volts. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14 by 22 millimeters. It supports surface mount installation and functions within an ambient temperature range of 0°C to 70°C.

Feature Summary

• Supports high-speed synchronous operation with zero bus turnaround capability for efficient data transfer
• Provides dense 9-megabit storage capacity in a compact 119-pin PBGA package
• Operates on a standard 3.3-volt power supply with defined voltage tolerance limits

Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment needing low-latency memory
• Industrial control systems utilizing parallel SRAM interfaces

Procurement Notes

Verify the exact suffix designation, as the provided model ends in GG while source data references BGG8. Confirm current availability status, as related variants are marked obsolete. Ensure compatibility with existing PCB footprints for the 119-PBGA package. Check for moisture sensitivity level requirements during handling. Validate that the specific pinout matches the design schematic before procurement.

Selection Notes

Select this component when a 9Mb synchronous SRAM with a 18-bit word width is required. The 100 MHz clock speed suits applications demanding rapid data throughput. The 119-PBGA package offers a compact solution for space-constrained designs. Ensure the system operates within the specified 0°C to 70°C temperature range. Verify that the 3.3V supply rail aligns with the board's power distribution network.

Part Context

This part belongs to the 71V65803 series of synchronous ZBT SRAMs manufactured by Renesas Electronics. These devices are designed for high-density memory applications where speed and efficiency are critical. The series typically includes various packaging options and speed grades to accommodate different system requirements. The technology leverages advanced CMOS processes to achieve low power consumption alongside high performance.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Related variants such as 71V65803S100BGG8 share similar specifications but differ in packaging or suffix details. Consult official manufacturer resources for qualified replacement lists. Verify electrical and mechanical compatibility before substituting any component.